Abstract
The relationship between the thickness d of p-type GaN and light extraction efficiency of GaN based vertical light emitting diodes(VLEDs) was described in this work.The VLEDs were grown on silicon by metal organic chemical vapour deposition(MOCVD).A series of VLEDs were fabricated with varied thickness of p-type GaN.It showed that the thickness d was in the order of wavelength and it had a significant influence on extraction efficiency due to interferences.The maximum in extraction efficiency was two times more than the neighboring minimum,which were located at 0.73λn and 1.01λn,respectively.Therefore,the extraction efficiency of VLEDs can be enhanced by optimizing the thickness of p-type GaN.
Published Version
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