Abstract
Thick oxide MNOS structures as studied by Frohman‐Bentchkowsky and Lenzlinger exhibit a flatband shift which saturates with time at bias. We have studied a MNOS structure (300Å of nitride and 300Å of oxide) with low conductivity nitride (10−8A cm−2 at , 373°K) which exhibits an increase in the rate of flatband voltage shift after an apparent saturation. This effect was observed on long time (2650 hr) bias‐temperature stress. Typical times to reach apparent saturation at 85°C varied from 200 to 1000 hr at 15 and 8.5V, respectively. At 165°C and 15V, the initial saturation almost merges with the subsequent rate increase of . Processing, characterization, and the bias temperature stress results for these structures are discussed. We propose that the stored charge is distributed throughout the rather than only at the interface.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
