Abstract
The relaxation current in the system electrolyte-dielectric-semiconductor is measured in the process of dielectric etching. A theoretic calculation of the charge profile in the MNOS structure dielectric is conducted for non-uniform distribution of trapping centres and charge injection from a field electrode. The distribution of trap density through the nitride film and their trapping cross-section are determined. The height of the triangular barrier for the electrons at the boundary nitride-aluminium is estimated. An effect enhancing the hole injection from a field electrode due to illumination is discovered. [Russian Text Ignored].
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