Abstract
This paper is concerned with the pseudopotential investigation of the electronic band structure and its related quantities for zinc-blende Ga 1− x In x N alloys. Our results for the important direct and indirect band-gap energies, electron effective masses and antisymmetric gaps for GaN and InN agree well with the available experimental data. Attention has also been paid to the effect of alloy disorder on the electronic properties of Ga 1− x In x N semiconductor alloys. For this purpose, the compositional disorder is added to the virtual crystal approximation as an effective potential. Such correction improves significantly the value of the band-gap bowing parameters in Ga 1− x In x N alloys.
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