Abstract
A resonant tunneling diode with the highest room temperature peak-to-valley current ratio (PVR) in the GaAs/AlGaAs system is described. Using a pseudomorphic InGaAs quantum well for carrier injection, room temperature PVR = 7.2 and liquid nitrogen temperature PVR = 27 were obtained with a reasonable peak current density of 104A/cm2. Experiments under hydrostatic pressure give evidence that X-like states in the barriers are strongly involved in the tunneling process.
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