Abstract
Present status and technical issues of proximity X-ray lithography (PXRL), especially synchrotron radiation (SR) lithography, and extreme ultraviolet lithography (EUVL) for use in the next generation lithography will be presented. To make SR lithography a practical method, many improvements in a wide range of lithographic components have been made over the past several years. These developments have been successfully applied to the fabrication testing of LSIs. For widespread industrial use, the feasibility and cost-effectiveness in mass production should be guaranteed. On the other hand, since there is a strongly demand for EUVL as a main candidate for the nodes of 70 and 50 nm, global consortiums have been making intense efforts to develop key components of EUVL, such as multilayer mirror and masks, resist processes, and sources. To make EUVL a major tool, timing in development and cost of ownership should be critical issues.
Published Version
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