Abstract
With synchrotron radiation (SuperACO) and a commercial stepper (Karl Suss XRS200), the proximity x-ray lithography is used for quick replication of high resolution patterns. The physical limits of the resolution are evaluated, taking into account both effects of near-field diffraction and photoelectrons. All experimental ingredients are described, including the achievements in 50nm pattern replication and also in 20nm linewidth mask fabrication. Data are compared to the theoretical predictions, showing a reasonable agreement under close proximity conditions.
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