Abstract
Ferromagnetic influence of a thin (~8 nm) surface CoPt layer on the circular polarization of the InGaAs/GaAs quantum well photoluminescence is observed in structure GaAs/InGaAs/GaAs/Al2O3 (1 нм)/CoPt with narrow GaAs spacer dS = 5 nm, while electroluminescence is polarized in the whole range of dS = 5–100 nm. It is suggested that the short-range proximity effect is determined by overlap of electrons wave functions with the nearby ferromagnetic CoPt film.
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