Abstract
Several schemes have been proposed for proximity effect correction (PEC) in e-beam lithography systems: biasing, dose control and GHOST. Typically, the correction is applied to the pattern data, a process that is computationally demanding and expensive in terms of data handling. A process which is independent of the pattern information, and could be implemented in the tool hardware, would be an attractive alternative. In this paper we present such a solution to the proximity effect correction problem, for use in SCALPEL (SCattering with Angular Limitation in Projection Electron Beam Lithography).
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