Abstract
The Electron Image Projector (EIP) is capable of reproducing patterns with dimensions less than one quarter of a micron over a 4″ slice. It has been shown that the requirements for patterning I.C. layers can be met but there was some concern over short range proximity effects. It has now been shown that corrections can eliminate the effects for patterns down to a quarter of a micron. The corrections can be made with one extra noncritical exposure or by using a modified mask. This removes the last remaining obstacle to the use of the Electron Image Projector for defining one quarter micron. I.C.s.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
