Abstract
Hydrogen depth profiles have been measured in thin layers, which are currently of great interest for semiconductor technology, using the p−p scattering method, originally demostrated by Cohen et al. [1] for relatively thick metallic foils using 17 MeV protons. The extension of this method to samples in the micrometer range using energies of the order of 1 MeV, as available with small accelerators, is discussed. The sensitivity was limited to 0.01 atomic percent hydrogen due to surface contamination; the depth resolution can be as good as 60 nm, depending on proton energy and sample thickness. Preparation techniques for proton-transparent foils are presented. Results are shown for plasma-deposited layers (silicon nitride, amorphous silicon), as well as for evaporated silicon and hydrogen surface contamination.
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