Abstract
It has recently been shown that LiNbO3 doped with 5 % MgO (MgO:LiNbO3) has a substantially reduced photorefractive response compared with undoped LiNbO3.1 This material is thus very promising for improving the efficiency of linear and nonlinear guided wave devices which have previously been affected by photorefractive-index damage. We have studied the proton-exchange process in MgO:LiNbO3 and undoped congruent LiNbO3 and compared our results for the two materials. Results were similar, with the most significant differences being increased resistance of the y face to etching and lower diffusion coefficients in the doped material.
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