Abstract
In chemically amplified resists that utilize acid-catalytic reactions for pattern formation, proton dynamics is important from the viewpoints of the insoluble layer formation due to acid loss, the resolution decrease due to acid diffusion, and the image quality improvement due to base-quencher effects. For electron-beam lithography, the protons and anions of the acid are initially generated at different places. Protons migrate in the resist matrix toward counter anions, attracted by the opposite electric charges. However, the details of proton migration are still unclear. In this study, we investigated proton quenching in poly(4-hydroxystyrene) films using base quenchers with different proton affinities. When the proton affinity of the base quencher was increased, the equimolecular proton adduct of the acid-sensitive dye was quenched without postexposure bake. Although the proton affinity is a gas-phase value, the quenching effect correlated well with the proton affinity.
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