Proton radiation effects on Cr-MIS single-crystal Si solar cells

Abstract

Cr-MIS solar cells on single-crystal Si, with a 2-cm2 area and approximately 10% efficiency, have been subjected to 1.0- and 1.6-MeV proton radiation at total dosages of up to 3.3×1013 p/cm2. Photovoltaic studies reveal characteristic short-circuit current and open-circuit voltage degradation similar to proton-irradiated junction-type solar cells. (See H. Y. Tada and J. R. Carter, Solar Cell Radiation Handbook, JPL Publication 77-56, 1977.) Spectral response measurements reveal output decay primarily due to minority-carrier diffusion-length decreases of up to 96%.