PROTON: Post-Synthesis Ferroelectric Thickness Optimization for NCFET Circuits

Abstract

For the first time, we demonstrate an optimization technique to synthesize circuits in the Negative Capacitance FET (NCFET) technology. NCFET is a rapidly emerging technology to replace the currently employed CMOS technology due to its profound ability to overcome the fundamental limit in scaling along with its full compatibility with the existing fabrication process. This is achieved by replacing the traditional transistor gate dielectric with a ferroelectric layer that manifests itself as a Negative Capacitance (NC), which magnifies the electric field. As a result, NCFET-based circuits can operate at a higher clock frequency without the need to increase the operating voltage. NC breaks one of the fundamental laws in physics in which the total capacitance of two capacitors connected in series becomes larger–instead of smaller in ordinary capacitors– than each of them. This could lead to sub-optimal netlists, suffering from significant increase in dynamic power and IR-drops. To suppress that, we employ the relation between delay decrease and capacitance increase of gates w.r.t ferroelectric thickness. Our technique takes an optimized netlist, obtained from commercial EDA tools, and then selectively determines the optimal ferroelectric thickness for each gate in the netlist, so that the maximum performance provided by NCFET is still achieved while the dynamic power is considerably decreased (45% on average), i.e., no trade-offs . Particularly, our technique enables the full exploitation of the performance benefits originating by NCFET, at a significantly lower (power) cost. Compared to state of the art, our technique decreases the energy-delay-product of circuits by 25% on average and reduces the deleterious effects of IR-drop by 56%. Hence, efficiency and reliability of circuits are improved without any loss in the obtained performance from NCFET.