Abstract
Significant improvement in the electrical isolation of closely spaced GaAs integrated circuit (IC) devices has been achieved with proton implantation. Isolation voltages have been increased by a factor of four in comparison to a selective implant process. In addition, the tendency of negatively based ohmic contacts to reduce the current flow in neighboring MESFET's (backgating) has been reduced by at least a factor of three. The GaAs IC compatible process includes implantation of protons through the SiO/sub 2/ field oxide layer and a three-layered dielectric- Au mask which is definable to 3-µm linewidths and is easily removed. High temperature storage tests have demonstrated that proton isolation, with lifetimes on the order of 10/sup 5/ h at 290° C, is not a lifetime limiting component in a GaAs IC process.
Published Version
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