Proton irradiation energy dependence of defect formation in graphene

Abstract

Graphene transistors on SiO2/Si were irradiated with 5, 10, and 15MeV protons at a dose rate of 2×1014cm−2. The effect of proton irradiation on the structural defects and electrical characteristics of graphene was measured using Raman spectroscopy and electrical measurements. Raman spectra exhibited high intensity peaks induced by defects after 5 and 10MeV proton irradiation, whereas no significant defect-induced peaks were observed after 15MeV proton irradiation. The drain current of graphene transistors decreased and the Dirac point shifted after proton irradiation; however, a flattening in the Dirac point occurred after 15MeV proton irradiation. The variations in characteristics were attributed to different types of graphene defects, which were closely related to the irradiation energy dependency of the transferred energy. Our observation results were in good agreement with the Bethe formula as well as the stopping and range of ions in matter simulation results.