Abstract
The optical absorption spectra, measured at either 77 or 300 K, of the intersubband transition in Si-doped GaAs/AlGaAs multiple quantum wells were studied before and after 1 MeV proton irradiation. The intersubband transition in samples with superlattice barriers was completely washed out after irradiation with doses as low as 1.0×1014 cm−2. The total integrated areas of the intersubband transitions were studied as a function of doses. It was observed that the intersubband transitions in samples with superlattice barriers degrade at a faster rate as compared to those transitions in samples with bulk barriers.
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