Abstract
Liquid phase crystallized poly-Si thin-film solar cells on glass with a-Si heterojunction emitters were irradiated with 68 MeV protons with different fluences up to 10 13 protons/cm 2 . The degradation of devices with n-type and p-type absorber has been compared. A significantly stronger decrease of the solar cell performance parameters for devices with n-type absorber has been observed as compared to the p-type absorber case. This result corresponds to the different decrease of the minority carrier diffusion lengths with regard to the different poly-Si absorber materials.
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