Abstract
The single event effects (SEEs) sensitivity of the HAS2 CMOS image sensor has been characterized with protons, electrons, and heavy ions. The read-out integrated circuit (ROIC) of the sensor was found to be sensitive to charged particle-induced upset. Vulnerable elements of the ROIC were identified by the analysis of image corruption events under beam. The charge collected from the passage of protons and electrons in the photosensitive zone has also been measured and compared to the results of Monte Carlo simulations. The charge collection depth of the sensor was found to differ significantly from the epitaxial layer thickness of the device.
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