Abstract
AbstractThe backscattering of 230‐keV protons, the depth dependences of the full width at the half minimum (FWHM) of proton angular scans and TEM were used to study the structural perfection of Si single crystals implanted with Er and Si ions at doses lower and higher than the respective amorphization thresholds. Implantation of 2‐MeV Er ions at a dose of 5x1013 cm–2 was found to produce high concentrations of point defects without amorphization of the Si layer. After the implantation of 100‐keV Si ions at a dose of 1x1017 cm–2 exceeding the amorphization threshold by two orders of magnitude, we observed a high density of extended defects but no amorphization. The dechanneling by point and extended defects was found to have different dependences (decreasing and increasing, respectively) of the scan FWHM on the scan depth. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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