Abstract
Silicon oxynitride (SiO x N y ) films have been formed by adding proper amount of oxygen gas to usual forming condition of silicon nitride (SiN x ) films in catalytic chemical vapor deposition (Cat-CVD) method. The composition and refractive index of the film can be systematically controlled by changing oxygen flow rate. Organic light-emitting diodes (OLEDs) covered with SiN x /SiO x N y stacked films have been completely protected from damage due to oxygen and moisture and their initial emission intensity is maintained over 1000 hours under 60 °C and 90% RH, which is equivalent to 50 000 hours in normal temperature and humidity conditions.
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