Abstract
Silicon nitride (SiN x ) and silicon oxynitride (SiO x N y ) films have been formed by catalytic chemical vapor deposition (Cat-CVD) method using hexamethyldisilazane (HMDS). Addition of NH 3 gas and increase in gas pressure can prevent carbonization of tungsten (W) catalyzer. These SiO x N y films have high gas barrier ability compare to the case of SiO x N y films using SiH 4 and thus are expected for novel sealing films.
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