Abstract
Silicon nitride (SiN x ) and silicon oxynitride (SiO x N y ) films have been formed by catalytic chemical vapor deposition (Cat-CVD) method using hexamethyldisilazane (HMDS). Addition of NH 3 gas and increase in gas pressure can prevent carbonization of tungsten (W) catalyzer. These SiO x N y films have high gas barrier ability compare to the case of SiO x N y films using SiH 4 and thus are expected for novel sealing films.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
