Abstract
This study is aimed at improving the characteristics of silicon nitride (SiN x) film deposited by catalytic chemical vapor deposition (Cat-CVD) method. Cat-CVD method can deposit SiN x films that have low hydrogen content and high density at low temperature without any plasma damage to substrates. Usually silane (SiH 4) and ammonia (NH 3) are used for source gases. Then adding hydrogen (H 2) gas to source gases makes characteristics of Cat-CVD SiN x improved. When using H 2 gas, hydrogen content in SiN x film becomes lower and electronic reliability becomes higher.
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