Abstract
Lasing has been reported in ZnSe by several investigators using optical and electron beam pumping. This paper discusses the prospects of lasing by injection luminescence in ZnSe based metal-insulator-semiconductor (MIS) heterostructures. Results on fabricated Au-SiO 2(CVD)-nZnSe devices are presented. The problems associated with chemical vapor deposition (CVD) of SiO 2 insulating layers on ZnSe and ohmic contact formation are discussed. Numerical computations on Au-SiO 2-nZnSe-nZnSSe/ZnSe structures involving carrier and photon confinement are reported. Results of modal analysis on MIS laser heterostructures are compared with (potential) p-n double heterojunctions. In addition, various quantum well structures (e.g., ZnSe-ZnSSe, ZnSe-ZnCdSe) are presented to investigate the operation of MIS quantum well lasers.
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