Abstract
Effects of deposition conditions on the interface properties of Inx PNy-InP metal - insulator - semiconductor (MIS) structure made by chemical vapor deposition (CVD) of InxPNy films onto InP substrates using PC13, NH3 and In as reagents were investigated. The composition of the films was varied from phosphorous nitride (PNx) without inclusion of In to InxPNy by changing the rate of the gas flow to introduce In during deposition. Electrical properties of the deposited films were found to depend on the concentration of In in the films. By introducing a small amount of In into phosphorous nitride films, the reduction of the frequency dispersion and the hysteresis width of capacitance-voltage (C-V) curve of MIS diodes was achieved. It was also found that the hysteresis type of C-V curve changed from electron injection type to ion drift type according to the amount of In introduced into the film. The density of fast interface trap states as determined from high frequency C-V measurement exhibits minima as low as 1010eV-1 cm-2.© (1989) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
