Abstract
In this paper we present the most recent results of our studies on TlInTe2 and TlInSe2 crystals (continuing our earlier studies on TaGaTe2), and analyze the nano-size application perspectives of A 3 B 3 C 6 2 semiconductors. It has been shown that A 3 B 3 C 6 2 semiconductors are prospective materials for developing the nano-size devices such as varistors, solid electrolytic accumulators and supercapacitors. The analysis is based on our experimental studies, which include the temperature dependence of the electrical conductivity, THz spectra, and permittivity. It has been shown that the electrical conductivity parameters of A 3 B 3 C 6 2 type semiconductors can be affected by -irradiation, and the effect depends on the dose of irradiation. The possibility of restructuring of electrical conductivity mechanism in these semiconductors makes them attractive for designing new nano-size electronic devices with controlled parameters.
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