Abstract

Electronic Properties of SiC Nanotubes: Quantum Simulation

Highlights

  • Since the discovery of carbon nanotubes (CNT's) by Iijima [1] much interest has been focused on quasione-dimensional nanomaterials because of their potential use in nanotechnology and nanoscale engineering.As for their application in semiconductor fields, the electronic properties depend on their chirality, to be more specific, the chiral vector (n, m) [2,3,4], which makes it difficult and troublesome to synthesize precise types of CNT's

  • To elucidate the feature of silicon carbide nanotubes (SiCNT's), we compare the density of states (DOS) in Fig. 2 among the (8,0) SiCNT, bulk SiC crystal, and the hydrogenated amorphous silicon sample [16], which indicates that the SiCNT has much narrower band gap than the bulk crystal, suggesting a good semiconducting property of SiCNT's

  • The plot is done in the cylindrical coordinates, where r is the radial distance from the nanotube axis, roughly corresponding to the bond-stretching motion, while θ is the angular position around the nanotube; the plot for the coordinate z is not shown since the positional change along the axis is small and slow

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Summary

Introduction

Since the discovery of carbon nanotubes (CNT's) by Iijima [1] much interest has been focused on quasione-dimensional nanomaterials because of their potential use in nanotechnology and nanoscale engineering. As for their application in semiconductor fields, the electronic properties depend on their chirality, to be more specific, the chiral vector (n, m) [2,3,4], which makes it difficult and troublesome to synthesize precise types of CNT's. Among the various types of semiconducting materials, silicon carbide possesses unique physical and electronic properties, and its application to electronic devices has been pursued. It provides a new possibility to fabricate this kind of semiconducting materials

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