Abstract
A novel gettering technique for a thin silcon-on-insulator (SOI) wafer is proposed. The gettering procedure for 1 h at 600°C using polycrystalline silicon film is followed by protection of the device region where the filmis immediately removed after the procedure from the SOI wafer. Gettering was evaluated by comparing electrical properties of devices in gettered and ungettered parts of the wafer where half of the wafer was gettered. A detectable reduction of an off-current was observed in the gettered parts. The gettering effect was supported by the reduction of the localized state density measured by the charge pumping method.
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