Abstract
Coulomb-blockade results are recorded at room temperature and normal pressure in monolithically integrated structures using GaAs wedges with a radius of ∼25nm and a minimal gap to the anode when a quasi-vacuum can be assumed. These devices have very low capacitances being of order 10−18F. A concept presented where this Coulomb blockade is used for signal production and storage in an ultra-dense memory-matrix application. A one-dimensional high-electron mobility heterostructurc together with local resonant intcrband tunnelling, isolated by deep ion implantation are proposed for the buried layer access electronics.
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