Abstract
To study the property of defects produced in high-purity and p-type germanium single crystals by thermal neutron, fast neutron or electron irradiation, annealing experiments on irradiated samples were performed with electrical measurements and a deep-level transient spectroscopy technique. The annealing behavior of defects produced by the recoil energy of (n, γ) reaction in a high-purity sample irradiated with thermal neutrons indicates that interstitial arsenic atoms and interstitial gallium atoms are restored to lattice sites during annealing in the temperature range from 180° C to 240° C and that from 260° C to 340° C, respectively. The defects produced by neutron irradiation were annihilated by annealing for 20 min at 380° C. Two hole traps located at E v+0.32 eV and E v+0.53 eV were formed in a high-purity crystal by electron irradiation.
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