Abstract
ZnO films were prepared on sapphire (012) substrates under an oxygen-rich condition by atmospheric-pressure metal-organic chemical vapor deposition (MO-CVD) using zinc acetylacetonate and oxygen gas. Crystal quality and low-temperature photoluminescence (PL) spectra of the films were remarkably changed by varying the oxygen gas flow rate. The minimum value of the full width at half maximum of the rocking curve for the ZnO (110) plane is 0.28 degrees. PL spectra of the films grown under an oxygen-rich condition exhibited a sharp emission at 3.313 eV, suggesting the formation of acceptor levels, and the emission from a neutral donor-bound exciton was very weak. Carrier concentration of the film was greatly affected by film thickness. The carrier concentration of a film with a thickness of 0.70 μm was 2.48 × 1017 cm−3, and this value was more than one order of magnitude lower than that of films with thicknesses of less than 0.39 μm. The effect of the acceptor was dominant in the upper layer of the films. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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