Abstract
Zirconium nitridefilms were prepared by reactive RF sputtering in argon-nitrogen mixtures, and various electrical properties of these films were investigated. The resistivities of zirconium nitride films varied from 5 X 102to 2 X 104µohm-cm, depending on sputtering pressure. In the resistivity range from 5 X 102to 1.3 X 103µ;ohm-cm, the films , display a reasonably small temperature coefficient of resistance (zero to -200 ppm/°C). After thermal aging, the zirconium nitride film resistors exhibit high stability.
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