Abstract
The phenomena occurring at the surface of bulk polycrystalline zinc phosphide and at interfaces of zinc-phosphide-based devices have been investigated. Electrical measurements of magnesium/zinc-phosphide junctions formed on annealed zinc-phosphide surfaces, and analyses of similar surfaces by Auger electron spectroscopy, indicate that loss of phosphorus from a very thin surface region is sufficient to severely degrade diode characteristics. Surface photovoltage measurements show that at the surface of as-etched or as-polished zinc phosphide, the energy bands are nearly flat. High-frequency capacitance measurements of aluminum/aluminum-oxide/zinc-phosphide structures indicate that a high interface state density, greater than 1013 eV−1 cm−2, prevents barrier formation by pinning the surface Fermi level. These properties severely limit the applicability of zinc phosphide to electronic devices.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
