Abstract
The formation of WN x /GaAs Schottky contacts using selective ion implantation of nitrogen into the sputtered tungsten film has been demonstrated. The contacts were characterized by Auger electron spectroscopy and current-voltage measurements. The composition of WN x films and the thermal stability of WN x /GaAs contacts were investigated. Good thermal stability of WN x /GaAs contacts compared with a W/GaAs contact was observed after capless rapid thermal annealing at 450, 800 and 950°C for 10 s.
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