Abstract
Properties of silicon nitride films grown on silicon single crystals were investigated. Films were grown by vapour phase reaction of SiH4-NH3-H2 system. As a function of substrate temperature and mixing ratio of NH3 and SiH4, film growth rate, etching rate, infrared absorption spectrum, refractive index, dielectric constant, I-V characteristics, and C-V characteristics were measured.It was observed that at the elevated substrate temperature refractive index and dielectric constant increased while break down voltage, etching rate and stability for applied electric field decreased. The mixing ratio did not change the properties of film when it was larger than 5, but when the mixing ratio became smaller, it affected those in the same way as increasing temperature.These results suggest the fact that the properties of silicon nitride films mainly depend upon the quantities of excess silicon atoms contained in them.
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