Abstract
The electrical conduction properties of ion-plated silicon nitride films in the form of aluminium-silicon nitride-aluminium structures have been studied in the temperature range 300 K to 470 K. The results obtained in the d.c. Conduction studies have been explained on the basis of the Poole-Frenkel conduction mechanism. The a.c. conduction studies in the frequency range 500 Hz to 30 kHz indicates that the conduction may be due to the electronic hopping mechanism. The breakdown strength of the silicon nitride capacitors for various dielectric thicknesses have also been studied and the results discussed.
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