Abstract
Tungsten layers have been evaporated on Si(100) surfaces under ultra high vacuum conditions. The tungsten is in the α phase. Before the disilicide formation (at ∼ 700°C), a low temperature (400°C) reaction has been observed. Si atoms segregate at the surface and do not form crystalline WSI 2 while the tungsten layer stays in the α phase. It is suggested that this low temperature reaction plays an important role in the roughness and the adhesion properties of the tungsten disilicide subsequently grown.
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