Abstract
We report experimental results related to the structural and electrical properties of thin SiC films. Thin carbon films with thicknesses 50 Å and 300 Å were deposited by R.F. sputtering and processed by rapid thermal annealing (RTA) for 3 min at temperatures of 800 °C and 1400 °C in a vacuum chamber at 2×10−5 Torr. The thin films properties were studied by Raman spectroscopy and electrical cross-conductance.
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