Abstract
The deposition of thin poly(tetrafruoroethylene) films on silicon substrates via the polymerization of tetrafluoroethylene from the vapor phase by means of an electron beam with an electron energy of 20–40 eV and the current density varied in the range 1–104 μA/cm2 has been studied. It has been shown that a variation in the current density during deposition allows one to widely vary the properties of the films being formed, in particular, their heat resistance. The crosslinked poly(tetrafluoroethylene) films prepared at a current density of 102 to 103 μA/cm2 demonstrate heat resistance up to 400–450°C. This opens wide prospects for the use of these films as dielectric layers in microelectronics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
