Abstract
The effects of doping of vacuum evaporated CdS thin films with tellurium have been investigated. The changes in dark conductivity, photoconductivity, Hall mobility and carrier concentration due to doping have been studied. The optical density and structure of these films have also been determined. From the results obtained for dark conductivity, Hall mobility and carrier concentration it has been suggested that the effect of doping with Te is to introduce deep donor levels in CdS. However, as the concentration of Te is increased, levels are introduced on both sides of these deep donor levels, the lower ones overlapping the valence band and the higher ones going nearer the conduction band. The optical density and structure of these films as determined by X-ray diffraction are similar to those reported earlier undoped CdS films.
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