Abstract
ABSTRACTA new approach to achieving a large-area silicon-on-insulator technology without pre-patterning is described. (100) Si films are first grown epitaxially on (100) yttria-stabilized cubic zirconia (YSZ) substrates by the pyrolysis of SiH4. The Si side of the <Si>/<YSZ>interface is then oxidized in pyrogenic steam (at 925 °C) or dry oxygen (at 1100°C) to form the structure <Si>/amorphous SiO2/<YSZ>. The oxidation occurs by the rapid diffusion of oxidants through the 0.42 mm thick YSZ substrate; e.g., a 0.3 μm SiO2layer is obtained in 6 h in steam. The samples are analyzed by Rutherford backscattering and channeling spectrometry, X-ray diffraction, infra-red reflectance, Auger electron spectroscopy and sheet resistance measurements. In addition to forming the preferred Si/SiO2interface, the back-side oxidation eliminates the most defective part of the Si film.
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