Abstract

Core level electron energy loss spectroscopy (EELS) and Auger electron spectroscopy (AES) were used to study yttria stabilized cubic zirconia (YSCZ) substrate surfaces subjected to various treatments before Si epitaxy for silicon-on-insulator (SOI) applications. The Y and Zr M4,5 EELS peaks are shown to be quite sensitive to chemical state differences. In the case of YSCZ these peaks exhibit subtle differences with varying yttria content. These differences are thought to be related to oxygen vacancy concentration and its effect on local density of states. Because of Y and Zr AES peak overlap problems, no changes in peak shape with yttria content were observed in corresponding AES specta. Both AES and EELS data were used to quantify the yttria concentration at YSCZ surfaces and to identify the elements remaining on YSCZ surfaces following various chemical treatments.

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