Initial stage of Pd adsorption on Si(111)7 × 7 surface studied by AES and EELS

Abstract

The initial stage of adsorption of Pd on a Si(111)7 × 7 surface has been studied by means of Auger electron spectroscopy (AES), electron energy loss spectroscopy (EELS) and surface work-function change. For Pd deposition at room temperature (RT) the Si(LVV) Auger signal intensity decays in a broken linear line. The structure factor, defined as the intensity ratio of the subpeak to the main one in Si(LVV) Auger spectra, increases up to a maximum around one monolayer coverages. In EELS spectra two peaks, characteristics of Pd, appear at the completion of the first Pd layer. Pd atoms deposited on Si(111) at RT form initially flat layers of a few monolayers height without mixing with substrate Si atoms. For Pd deposition at a moderately high temperature (MT) of about 300°C, however, the structure factor for Si(LVV) Auger spectra does not change. EELS peaks, characteristic of Si substrate, remain clearly even beyond one monolayer coverage. Pd atoms deposited at MT are unstable and easily diffuse into the bulk. We present evidences to support the “screening” model for the bond-breaking mechanism at the Pd/Si interface.