Abstract
Growth of polycrystalline silicon on insulating substrates such as glass, silicon dioxide and fused quartz was studied using an electron beam gun evaporation technique. Growth characteristics were studied as a function of substrate temperature. The results of scanning electron microscopy, secondary ion mass spectrometry and X-ray diffraction studies on various films are presented. Hall mobility, resistivity and carrier concentration measurements are also presented. Growth of polycrystalline films (as determined by X-ray diffraction studies) on glass substrates at as low a temperature as 525 °C were observed. Below this substrate temperature, films became amorphous. The grain size increased with the increase in the substrate temperature. The highest value of the Hall mobility measured was about 10 cm 2 V −1 s −1. Both n-type and p-type films were obtained.
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