Abstract
Pure and oxygenated n-type silicon samples have been characterized by Hall mobility and conductivity measurements as a function of temperature, before and after irradiation. p +n silicon diodes have been characterized by C–V and reverse current measurements as a function of temperature. Investigated samples have been grown by FZ technique in Polovodice (Prague) and have been irradiated with protons at CERN facilities ( Φ=4×10 12–10 14 protons/cm 2). Carrier concentrations have been evaluated by conductivity and Hall mobility measurements. C–V measurements on irradiated diodes ( Φ≅10 12 protons/cm 2) show a decrease of the effective concentration N eff with respect to unirradiated samples. Reverse current measurements as a function of temperature show that oxygenated diode has a leakage current lower than that of pure diode at temperatures less than 250 K.
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