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Abstract
A preliminary evaluation of Pt films, deposited at rates of 0.4-7 nm/min by a potentially manufacturable liquid-source MOCVD technique, was carried out with respect to microstructure, step coverage, and electrical properties. The Pt films (12-140 nm) were deposited on various substrates (thermal-SiO 2 /Si, native-oxide/Si, TiN/SiO 2 /Si) via the pyrolysis of trimethyl methyl cyclopentadienyl platinum [(CH 3 ) 3 CH 3 CpPt]. The substrate temperature regimes through which Pt deposition occurred, were 175-250°C and 300-450°C in H 2 and O 2 ambient, respectively. The growth mechanisms of the Pt films, deposited under H 2 and O 2 ambient, were inferred from the observed growth rate, texture evolution, grain size, and estimated nucleation density. Additionally, the step-coverage of Pt deposited on TiN at T sub of 375°C in O 2 was 80%. Moreover, the resistivity of a 30 nm Pt film was 22.8 w z -cm.
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