Abstract
We report the crystalline quality and electrical properties of PbZrxTi1−xO3 (PZT) films on n-type Si(100) substrates with CeO2/SiO2 dual buffer layers. PZT films and CeO2 buffer layers were prepared by pulsed laser deposition technique, and SiO2 buffer layers were formed by thermal dry oxidation. It was found that CeO2/SiO2 dual buffer layers effectively prevented Si and Pb interdiffusion between PZT and Si substrates. Furthermore, the capacitance-voltage (C-V) characteristics of the PZT/CeO2/SiO2/Si heterostructures demonstrated ferroelectric switching properties, showing a memory window as large as 2.7 V at 1 MHz.
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