Abstract
Nano-porous silicon has been prepared by electrochemical etching a cell of p-type Si wafer for different etching times (20, 35, and 45 min). The samples have been exposed to an average neutron flux of 2 × 108 neutrons/cm2. Transmission electron microscope (TEM) images show an increase of porous width with increasing etching time, which gets larger in diameter after irradiation. Besides, the Raman scattering measurements exhibit a redshift and a considerable stronger asymmetry after irradiation. Photoluminescence (PL) spectra reveal the formation of a PSi layer with stronger PL intensity and redshift region in comparison to the PSi samples before radiation. Therefore, the impact of neutron radiation on the PSi characteristics has a significant fingerprint in the formation of a homogeneous porous layer.
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