Properties of oxidation quantum dots-CdO/TiO2 heterostructures constructed as DSSC photoanodes

Abstract

The oxidation state quantum dots-CdO/TiO2 (QDs-C/T) heterogeneous film was prepared by Successive Ionic Layer Adsorption and Reaction (SILAR) method-Sintering method with the controlling of CdO content, which was used as the interface modification material to modified the TiO2 porous film. The prepared QDs-C/T was used as photoanodes to assemble DSSC to investigate the influence of the photoelectric conversion performance. According to photoelectric test, QDs-C/T heterogeneous films are more beneficial to increase the open-circuit voltage (VOC), prolong life of photogenerated electrons, and reduce the recombination of electron hole pairs, which increases the photoelectric conversion efficiency. Under the condition of sintering at 300 °C for 2 h, QDs-CdO/TiO2 heterogeneous films with a concentration of 0.05 M CdO and TiO2 composite was used as a photoanode to prepare DSSC with the highest JSC for 14.89 mA cm−2, and the photoelectric conversion reached 8.91%, which increased by 61.41% compared with pure TiO2 photoanode.